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Konstantin Petrosyants Spoke at IEEE Latin American Test Symposium
On April 6th-9th, the IEEE Latin American Test Symposium was held under the auspices of the Institute of Electrical and Electronics Engineers in the city of Foz do Iguaçu, Brazil.
During the symposium, leading scientists and specialists from some of the largest manufacturers of microelectronic devices and software from over 20 countries, including USA, UK, France, Germany, Italy, China, Japan, Russia, Brazil, Argentina, Mexico, and Uruguay presented their reports.
Konstantin Petrosyants, Professor at the School of Electronic Engineering, presented the report ‘Fault Simulation in Radiation Hardened SOI CMOS VLSIs using Universal Compact MOSFET Model’, co-authored by L. M. Sambursky, I. A. Kharitonov, B. G. Lvov.
The report aroused great interest among the participants. Symposium participants from MIEM HSE were invited to take part in three major international conferences and to publish their works in several top-rated foreign scientific journals.