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Regular version of the site
Master 2024/2025

Materials for Microelectronics: Technologies and Diagnostics

Area of studies: Chemistry
Delivered by: Faculty of Chemistry
When: 2 year, 1, 2 module
Mode of studies: offline
Open to: students of one campus
Master’s programme: Химия молекулярных систем и материалов
Language: English
ECTS credits: 6

Course Syllabus

Abstract

Thin film devices represent to-date most developed and comprehensive technological processes and serve the applications driving global economy. The manufacturing includes a variety of deposition techniques, patterning and etching, inline analytics, and other actions. Such devices are used in electronics, photonics, catalysis, energy storage and harvesting at least. Besides high-end engineering, a crucial part of this research and development is in material science and modern analytics. The course in question gives therefore a broad overview of materials, analytics, and technologies of thin film devices. The materials are comprised of semiconductors, superconductors, ferroelectric and thermoelectric ones mostly. They cover such classes of solids as oxides, chalcogenides, hybrid halides, coordination compounds, carbon- and silicon-based materials, organic polymers. To better understand how defects and free charge carriers form, some insights into solid-state chemistry is given. The course considers modern analytics divided in four parts: determination of composition (e.g. EDX, EPMA, XPS, GDOES etc.); characterization of structure (e.g. XRD, EBSD, Raman spectroscopy, AFM, SEM etc.); disclosure of electronic structure (UPS, IPES, Auger spectroscopy, EXAFS/XANES, SPV, KP/PYS); characterization of the functional properties (i.e. electrical, optical, magnetic ones, PL, TRPL, IV, CV etc.). The third part gives an overview of thin film devices (e.g. solar cells, photodiodes, transistors, information storage, detectors, displays, batteries, etc.) explaining principles of their functioning. A general information on manufacturing is given, considering such processes as film deposition (sputtering, CVD, ALD, wet-chemical ones), doping, patterning (masking, lithography, etching, imprinting) and encapsulation. Finally, the diagnostics of various devices in a sense of their performance is reviewed.
Learning Objectives

Learning Objectives

  • Get in touch with the complexity and variety of the modern thin film devices
  • Learn principles of their functioning and diagnostics
  • Get an overview with many examples of technologies and trends in industry of deposition techniques and modern relevant analytics
  • Working with a large number of literature sources more effectively
  • Train and improve scientific English
Expected Learning Outcomes

Expected Learning Outcomes

  • tudent knows the basics of homogeneous Bulk Semiconductors; Impurities; Impurities binding energy; Donor Impurities; Acceptor Impurities
  • Learn major deposition techniques and thin film analytics.
  • Get basic knowledge on PV-technologies (silicon based, CIGS-based, perovskite solar cells, tandem devices).
  • Understand functioning principals of modern thin film devices (transistors, optoelectronic devices, sensors, batteries etc.).
  • Know special methods of characterisation and diagnostics of thin film devices.
  • Student knows the basics of semiconductor properties and their interrelation with structure and composition.
  • Student has a broad overview on application of semiconductors in modern industry
  • Student knows major methods of films deposition and related analytical tools
  • Student knows the structure of the film stacks in various devices and corresponding patterning technologies used
Course Contents

Course Contents

  • Introduction.
  • Materials
  • Deposition
  • Diagnostics
  • Application
Assessment Elements

Assessment Elements

  • non-blocking The work on seminars
    Example: Student has attended 9 (50%) of seminars, actively worked at 3 (17%) of them and given his two talks as good as 8 (of 10) and 6 (of 10). The exam, he passed for the note 7 (of 10). The overall note will be calculated as follows: 0,4P*0,5 + 0,8P*0,17 + 2,8P*0,7seminars + 6P*0,7 = 6,496P  6.5P Exam itself will be performed in a form of discussion on lecture topics chosen arbitrary with each student separately. The entire list of questions will be shared with students in advance.
  • blocking The oral exam
Interim Assessment

Interim Assessment

  • 2024/2025 2nd module
    0.6 * The oral exam + 0.4 * The work on seminars
Bibliography

Bibliography

Recommended Core Bibliography

  • Дыбко, М. А. Цифровая микроэлектроника : учебное пособие / М. А. Дыбко, А. В. Удовиченко, А. Г. Волков. — Новосибирск : НГТУ, 2019. — 200 с. — ISBN 978-5-7782-3834-3. — Текст : электронный // Лань : электронно-библиотечная система. — URL: https://e.lanbook.com/book/152139 (дата обращения: 00.00.0000). — Режим доступа: для авториз. пользователей.

Recommended Additional Bibliography

  • Барыбин, А. А. Электроника и микроэлектроника. Физико-технологические основы : учебное пособие / А. А. Барыбин. — Москва : ФИЗМАТЛИТ, 2008. — 424 с. — ISBN 978-5-9221-0679-5. — Текст : электронный // Лань : электронно-библиотечная система. — URL: https://e.lanbook.com/book/2105 (дата обращения: 00.00.0000). — Режим доступа: для авториз. пользователей.

Authors

  • Еремейкина Елена Алексеевна
  • Постриганова Анастасия Владимировна