Петросянц Константин Орестович

Education, Degrees and Academic Titles

1987

Professor

1985

Doctor of Sciences* in Solid-state Electronics, Radioelectronic Components, Micro- and Nanoelectronics, Quantum Effect Devices
Moscow State Institute of Electronics and Mathematics

1980

Associate Professor

1973

Candidate of Sciences* (PhD)

1968

Degree
Moscow Institute of Electronic Engineering, Faculty of Automatics and Computer Engin.

* Candidate of Sciences
According to the International Standard Classification of Education (ISCED) 2011, Candidate of Sciences belongs to ISCED level 8 - "doctoral or equivalent", together with PhD, DPhil, D.Lit, D.Sc, LL.D, Doctorate or similar. Candidate of Sciences allows its holders to reach the level of the Associate Professor.

* Doctor of Sciences
A post-doctoral degree called Doctor of Sciences is given to reflect second advanced research qualifications or higher doctorates in ISCED 2011.

Professional Interests

electronics microelectronics nanoelectronics

Awards and Accomplishments

Best Teacher — 2016

Courses (2024/2025)

Advanced Technologies of the World and National Electronics (Postgraduate course; 1 year, 1 semester)Rus
Engineering in Electronics, Micro- and Nanoelectronics (mentor's workshop) (Master’s programme; HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE); 2 year, 1-3 module)Rus
Engineering in Electronics, Micro- and Nanoelectronics (mentor's workshop) (Master’s programme; HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE); 1 year, 1-4 module)Rus
Micro- and Nanoelectronics (Master’s programme; HSE Tikhonov Moscow Institute of Electronics and Mathematics (MIEM HSE); 1 year, 1, 2 module)Rus
Past Courses

Timetable for today

Full timetable

Editorial board membership

2011: Member of the Editorial Board , Электронная техника. Серия 2: Полупроводниковые приборы.

1994: Member of the Editorial Board , Известия высших учебных заведений. Электроника.

1994: Member of the Editorial Board , Нано- и микросистемная техника.

Conferences

2016
The IEEE Latin-American Test Symposium (LATS-2016) (Фос-ду-Игиасу). Presentation: Fault Simulation in Radiation-Hardened SOI CMOS VLSIs using Universal Compact MOSFET Model
Международный форум «Микроэлектроника-2016». 2-я научная конференция «Интегральные схемы и микроэлектронные модули» (Крым, г. Алушта). Presentation: Модели полупроводниковых приборов для проектирования БИС космического назначения
Международный форум «Микроэлектроника-2016». 2-я научная конференция «Интегральные схемы и микроэлектронные модули» (Крым, г. Алушта). Presentation: Схемотехнические SPICE модели элементов БИС, учитывающие радиационные эффекты
Международный форум «Микроэлектроника-2016». 2-я научная конференция «Интегральные схемы и микроэлектронные модули» (Крым, г. Алушта). Presentation: Исследование характеристик КНИ МОП-транзисторов высокотемпературных ИС (до 300°С) при уменьшении размеров до 0,18 мкм

2015
The 13th International Workshop on Advanced Infrared Technology and Applications (Пиза). Presentation: Analysis of temperature-current rise in modern PCB traces by means of thermography
VIII-th International Workshop NDT in Progress (Прага). Presentation: Non-destructive Testing of Electronic Components Overheating Using Infrared Thermography
Semiconductor Thermal Measurement, Modeling and Management Symposium (SEMI-THERM 2015) (San Jose). Presentation: Electro-Thermal Modeling of Trench-Isolated SiGe HBTs Using TCAD
ХIV Всероссийская научно-техническая конференция «Твердотельная электроника. Сложные функциональные блоки РЭА» (Москва). Presentation: Учёт влияния импульсного ионизирующего воздействия в SPICE-моделях биполярных транзисторов и диодов
ХIV Всероссийская научно-техническая конференция «Твердотельная электроника. Сложные функциональные блоки РЭА» (Москва). Presentation: Определение параметров SPICE-моделей биполярных транзисторов в диапазоне температуры (–60 °C … +125 °C)
2nd International Conference on Modeling Identification and Control. MIC 2015 (Paris). Presentation: High-k Gate Stacks Influence on Characteristics of Nano-scale MOSFET Structures
XXV Международная конференция «Радиационная физика твердого тела» (Севастополь). Presentation: Приборно-технологическое моделирование 45нм High-k МОПТ с учетом воздействия гамма излучения
XXV Международная конференция «Радиационная физика твердого тела» (Севастополь). Presentation: Приборно-технологическое моделирование характеристик SiGe ГБТ при воздействии протонов

2014
The International Conference On Advances in Computer Science and Electronics Engineering (Куалу-Лумпир). Presentation: Multilevel System for Thermal Design, Control and Management of Electronic Components

Supervisor of the following Doctoral theses

for a Candidate of Sciences degree

1
M. R. Ismail-zade Development and research of MOSFET and JFET compact SPICE models with account for thermal effects, 2022
2
Development of a macromodel of an operational amplifier with thermal and radiation effects
3
Research and development of SPICE models of hybrid microwave modules based on GaN transistors

28

Nov

2016

MIEM School of Electronic Engineering Attends TELFOR 2016

On November 22-23, 2016, the 24th Telecommunications Forum (TELFOR 2016) was held in Belgrade, Serbia. The event was organized by the Ministry of Education, Science and Technological Development of Serbia, the Ministry of Trade, Tourism and Telecommunications of Serbia, and IEEE Serbia and Montenegro Section.

25

Apr

2016

Konstantin Petrosyants Spoke at IEEE Latin American Test Symposium

On April 6th-9 th , the IEEE Latin American Test Symposium was held under the auspices of the Institute of Electrical and Electronics Engineers in the city of Foz do Iguaçu, Brazil.

Konstantin O. Petrosyants